Imec has produced record results for indium gallium arsenide (InGaAs) gate-all-around (GAA)-channel devices on 300mm silicon wafers. The peak transconductance (gm) for the GAA transistors was as high as 2200μS/μm for the 50nm gate-length GAA channel device, while the subthreshold swing (SSSAT) was as low as 110mV/decade. The drain bias was 0.5V. The GAA structure was ...
Imec’s record-breaking GaAs transistors
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