2016年6月30日 星期四

Dissecting Phase Change Memory: Atom by Atom, Bond by Bond

The innovative application of a mix of simulation techniques has provided a team at IBM with a unique ability to view the connection between atomic bond type, drift and electrical conductivity in PCM devices. Results overturn some old ideas of band gap expansion.

from EETimes: http://ift.tt/292WaP8
via Yuichun

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