Toshiba upgrades RF SOI process

Toshiba upgrades RF SOI process

Toshiba has developed a next generation TarfSOI (Toshiba advanced RF SOI) process optimised for RF switch applications. Toshiba claims that RF switch ICs, fabricated using the new TaRF8 process such as the new SP12T  process, achieve the lowest insertion loss  in the industry of 0.32dB at 2.7GHz. Sample shipments of SP12T RF switch ICs fabricated ...

David Manners

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