Fifteen months into its course, the WAYTOGO FAST EU R&D project for promoting FD-SOI has achieved some significant targets the European Nanoelectronics Forum in Rome today was told. . Boosters for 14 and 28 FD-SOI have been investigated and developed . SOl wafers: +20% nFET loff/leff tradeoff . STRASS technique: +1.6GPa demonstrated (stress level > ...
Read full article: NANO16: FD-SOI moves towards 22nm
from News – Electronics Weekly http://ift.tt/2ggRvAJ
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