French research labs Leti and Inac have demonstrated a quantum-dot-based spin qubit using a CMOS process on a 300mm FDSoI wafer. The device, developed with the University of Grenoble Alpes, consists of a two-gate, p-type transistor with an un-doped channel. See University of Sussex quantum gate “Our one-qubit demonstrator brings CMOS technology closer to the emerging ...
Read full article: Leti demonstrates qubit on CMOS wafer
from News – Electronics Weekly http://ift.tt/2gzxrpE
via Yuichun
沒有留言:
張貼留言