MIT researchers have fabbed an IC by depositing ‘significantly different’ materials in the same layer, a few atoms thick. “The methodology is universal for many kinds of structures,” says researcher Xi Ling. “This offers us tremendous potential with numerous candidate materials for ultra-thin circuit design.” The technique also has implications for the development of ultra-low ...
MIT fabs IC with different materials in same layer
from ElectronicsWeekly » News http://ift.tt/1QFsN8K
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