MagnaChip Of Seoul has introduced of a High-Voltage Super Junction MOSFET with a 900V breakdown voltage and low total gate charge (Qg) (““90R1K4P”). The device with two package types, I-PAK and D-PAK, will sample to customers in November 2018 and will be manufactured in high volume in early first quarter of next year. 90R1K4P features ...
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