ST and Leti to make GaN-on-Si power transistors

STMicroelectronics to manufacture GaN-on-Si power transistors, based on a process developed by French research lab Leti, ST and IRT Nanoelec. The process will be transferred from Leti’s 200mm R&D line to an ST-operated 200mm-wafer pilot-line, operational by 2020, which will allow ST to address high-efficiency, high-power applications – ST singles out: automotive on-board chargers for ...

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