NXP adds to LDMOS RF power transistors

NXP has introduced new RF power transistors designed for smart industrial applications, featuring 65 V laterally diffused metal oxide semiconductor(LDMOS) silicon technology. With more power density, a lower current level and wider safety margins than previous RF power solutions, 65 V LDMOS enables more integrated and reliable Industry 4.0 systems. The MRFX series of 65 ...

This story continues at NXP adds to LDMOS RF power transistors

Or just read more coverage at Electronics Weekly

from News – Electronics Weekly https://ift.tt/2xzJOgA
via Yuichun