Hitachi has developed a SiC-based ‘TED-MOS’ (Trench-Etched-Double-Diffused MOS) device using a fin-structured trench MOSFET based on the conventional DMOS-FET. An energy saving of 50% over a DMOS-FET was confirmed as the structure reduces the electric field strength, an index of durability, by 40% and resistance by 25% compared to a DMOS-FET. Hitachi intends to apply ...
This story continues at Hitachi develops TED-MOS
Or just read more coverage at Electronics Weekly
from News – Electronics Weekly https://ift.tt/2QCUBi6
via Yuichun
沒有留言:
張貼留言