Microsemi is sampling the first of its next-generation 1.2kV silicon carbide mosfets, the 40m[Ohm] MSC040SMA120B, plus 1.2kV SiC Schottky barrier diodes to go with it. For rugged operation in industrial, automotive and commercial aviation, the SiC mosfet family is avalanche-rated and offers a high short circuit withstand rating. Additional members of the product family will ...
This story continues at APEC: Microsemi samples 1.2kV SiC mosfets
Or just read more coverage at Electronics Weekly
from News – Electronics Weekly http://ift.tt/2I9IAfu
via Yuichun
沒有留言:
張貼留言