Russian scientists have measured magnetoresistance oscillations and the quantum Hall effect in InAs heterostructures, and are predicting potential 200GHz operation from the material. The material tested was n-In0.85Ga0.18As/In0.82Al0.82As, specifically grown for its high indium content to increase carrier speed. “Generally speaking, structures with quantum wells and high InAs content have already demonstrated excellent results in microwave ...
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