PCIM: First trench SiC mosfet is 2x better

Trench structures will halve the on-resistance of silicon carbide power mosfets, claimed Rohm.

“Compared to existing planar-type SiC mosfets, on-resistance is reduced by 50% in the same chip size, making it possible to significantly decrease power loss,” said the firm. “Switching performance is improved with approximately 35% lower input capacitance.

In a trench structure, the mosfet gate is formed on the sidewall of a trench in the chip surface.

“Unlike planar-type mosfets, JFET resistance does not exist, making greater miniaturisation possible. This is expected to result in on-resistance close to the performance of the original SiC material,” said Rohm.

For long-term reliability, the new structure mitigates the electric field generated in the trench gate – see diagram.

Combining the SiC trench mosfets with SiC Schottky diodes in a 1200V/180A half-bridge module, 42% reduced switching losses are claimed compares with planar SiC mosfets.

 

steve bush

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via Yuichun