Efficient Power Conversion (EPC) has introduced two GaN FETs that handle 31A continuously – the 200V EPC2034 and the 150V EPC2033.
The firm is keen to promote pulse capability, which is 140A for the 200V part, and 260A for the 150V part. Both are 2.6×4.6mm, and can operate with junctions up to 150°C. Typical on-resistance is 7mΩ (200V, 10mΩmax) and 5mΩ (150V, 7mΩmax).
Solder balls are placed (see photo) with a 1mm pitch on one axis. “The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying,” said EPC.
Applications are predicted in dc-dc converters, synchronous rectification, motor drives, LED lighting, industrial automation, and Class-D audio amplifiers.
An evaluation board, EPC9047, includes a half bridge made from two of the 150V transistors and a Texas Instruments UCC27611 gate driver (optimised for this kind of FET), optocouplers and capacitors for supply and bypass – all on 50 x 37mm.
Both FETs and the development board are available from Digi-Key.
| Part number | VDS | RDS(on) (typ) |
QG (typ) |
ID (pulsed) |
Size | Price (1,000 units) |
| EPC2033 | 150V | 5.0mOhm | 10nC | 260A | 2.6 x 4.6mm | $4.25 |
| EPC2034 | 200V | 7.0mOhm | 8.5nC | 140A | 2.6 x 4.6mm | $4.37 |
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