2015年3月30日 星期一

Intel, Micron unveil new 3D NAND flash memory

Intel and Micron have jointly announced the availability of their 3D NAND technology. This new 3D NAND technology, jointly developed by the companies, stacks layers of data storage cells vertically to create storage devices with three times higher capacity than competing NAND technologies. This enables more storage in a smaller space, bringing significant cost savings, lower power usage and higher performance to a range of mobile consumer devices as well as the most demanding enterprise deployments, the companies claimed.



from DIGITIMES: IT news from Asia http://ift.tt/19mCV3a

via Yuichun

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