Infineon has used its latest silicon carbide die technology in a 1,200V mosfet for automotive on-board chargers and dc-dc converters. The snappily-named AIMBG120R010M1 comes in a 10 x 15 x 4.4mm D2PAK-7L (7 lead TO263) package and handles 1.2kV across -55 to 175°C. Creepage is 5.89mm, suiting the device to 800V systems. Its ‘Gen1p’ process ...
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