Innoscience has released an improved bi-directional GaN transistor that can replace back-to-back silicon mosfets in high-side switching. Called INN040W048A, it is a 40V bi-directional GaN-on-silicon HEMT with on-state resistance as low as 4.8mΩ, which comes in a 2.1 x 2.1mm WLCSP package. It follows on from the 40V 15A 7.8mΩmax (5.5mΩ typ) 2 x 2mm ...
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