2021年11月19日 星期五

SiC defect study could improve power bipolar transistors

Silicon carbide mosfets and Schottky diodes are both subject to the unipolar limit – the trade-off between breakdown voltage and specific resistance of the drift layer. Super-junction transistors bypass this limit, and bipolar transistor are not subject to it, but both require p-type semiconductor layers in otherwise n-type unipolar devices. To create p-type SiC, it ...

This story continues at SiC defect study could improve power bipolar transistors

Or just read more coverage at Electronics Weekly



from News – Electronics Weekly https://ift.tt/3nwf1vu
via Yuichun

沒有留言:

張貼留言