2021年2月19日 星期五

ISSCC 2021: Integrated GaN gate drive switches mains power at >100V/ns

GaN power transistors are becoming the gold standard for fast compact mains power switching – GaN HEMTs have no reverse recovery charge and can be designed with low on-resistance and low parasitic capacitance. However, their gates are fussy, and unbelievably fussy if all available speed is to be squeezed from this technology. Inappropriate gate drive ...

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