2018年4月24日 星期二

Manchester thin-film oxide transistor hits 1GHz

The university of Manchester has made a 1GHz thin-film transistor from amorphous IGZO – indium gallium zinc oxide. The devices, created with Shandong University in China, are made on a high-resistance silicon substrate using Ta2O5 gate dielectric. The material is 80% transparent, opening the door to display applications. “Making a high performance device, like our GHz ...

This story continues at Manchester thin-film oxide transistor hits 1GHz

Or just read more coverage at Electronics Weekly



from News – Electronics Weekly https://ift.tt/2HruZQe
via Yuichun

沒有留言:

張貼留言