Imec fabs p-GaN power devices on thermally matched substrates.

 Imec and fabless specialist Qromis, have developed  enhancement mode p-GaN power devices on 200mm engineered Coefficient of Thermal Expansion (CTE)-matched substrates, processed on Imec’s silicon pilot line. The substrates are offered by Qromis as commercial 200mm QST substrates as part of their patented product portfolio. Today, GaN-on-Si technology is the industry standard platform for commercial GaN ...

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