Samsung says it has begun mass producing 2nd-generation 10nm nanometer 8Gb DDR4 DRAM. The 2nd-generation delivers a 30% ‘productivity gain’ over the company’s 1st-generation 10nm-class 8Gb DDR4, says Samsung. Performance and power have been improved about 10% and 15%. respectively. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200 Mbps of the ...
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