2017年11月29日 星期三

X-FAB adds to low-noise transistor portfolio

X-FAB has added three new low-noise transistors to its 180nm process node:  a 1.8 V low-noise NMOS, a 3.3 V low-noise NMOS and a 3.3 V low-noise PMOS – all of which offer drastically reduced flicker noise compared to standard CMOS offerings. These transistors are mainly designed for sensor deployments which require very low-noise signal amplification ...

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