Cree has launched a Ku-Band MMIC covering the 13.5 – 14.75GHz commercial satcom band. The new 30W GaN MMIC two-stage high power amplifier (HPA) will allow the satcom industry to achieve higher power, more efficient Ku-Band solutions than the TWT or GaAs solutions used today, the company claimed.
Available in a 25×9.6mm, 10-lead, metal/ceramic flanged package, the 50Ω Ku-Band MMIC HPA operates at 40V VDD, and delivers satcom measured performance of 20dB linear gain at 42dBm average output power, while maintaining linearity under the -33dBc OQPSK signal, and with adjacent channel power at a drain efficiency of 20%.
The 30W GaN MMIC HPA also delivers higher breakdown voltage, power density, and thermal conductivity than comparable Si, GaAs, or GaN-on-Si transistors, in addition to wider bandwidth performance.
“It was specifically designed in response to customer requests for higher power and higher efficiency Ku-Band amplifier solutions,” says Cree’s Tom Dekker.
The chip will be stocked at Digi-Key and Mouser by mid-summer 2015.
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