40v MOSFETS claim to cut on-resistance and switching loss

Claiming to cut both on-resistance and switching loss, while optimising body-diode properties, ST’s 40V MOSFETs, STL320N4LF8 and STL325N4LF8AG, aim to save energy and ensure low noise in circuits for power conversion, motor control, and power distribution. The  40V N-channel enhancement-mode MOSFETs leverage the latest-generation STPOWER STripFET F8 oxide-filled trench technology to achieve superior figures of ...

This story continues at 40v MOSFETS claim to cut on-resistance and switching loss

Or just read more coverage at Electronics Weekly

from News – Electronics Weekly https://ift.tt/9bU2YZC
via Yuichun