Infineon is shipping a new generation of OptiMOS Source-Down (SD) power MOSFETs. They come in a PQFN 3.3 x 3.3 mm 2 package and a wide voltage class ranging from 25 V up to 100 V. This package sets a new standard in power MOSFET performance, offering higher efficiency, higher power density, superior thermal management ...
This story continues at Infineon upgrades OptiMOS
Or just read more coverage at Electronics Weekly
from News – Electronics Weekly https://ift.tt/3GbDRrf
via Yuichun
沒有留言:
張貼留言