A 6mΩ 750V SiC transistor is amongst nine devices announced by UnitedSiC. The company decribes the transistors as ‘FETs’, although each is a co-packaged cascode pair of a depletion-mode high-voltage SiC JFET and a low-voltage silicon mosfet. “At a Rds(on) of less than half the nearest SiC mosfet competitor, the 6mΩ device also provides a short-circuit ...
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