2021年6月17日 星期四

Structure thins silicon capacitors to

Murata has announced a new generation silicon capacitor process which builds devices less than 40µm thick and up to 1.3µF/mm2. Made using semiconductor lithography techniques, the capacitors are intended for high-end applications such as in-package power supply decoupling for mobiles and high-performance computing. The main change in the process is a different 3D structure with ...

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