Are NC-FETs going to make it?

Researchers at Purdue University have surveyed research towards negative capacitance field-effect transistors (NC-FETs), and published their findings. This type of transistor has a ferroelectric layer (Hf02, for example) within the gate stack, which could allow is break the 60mV/decade sub-threshold slope limit for mosfets at room temperature. “Given the potential, there is a need for ...

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