Samsung is ramping up production of its 512GB eUFS 3.0 3D NAND flash memory module. In H2 it plans to launch a 1TB device. Samsung’s 512GB eUFS 3.0 stacks eight of the company’s fifth-generation 512Gb 3D NAND die and integrates a high-performance controller. At 2,100 MB/s, the new eUFS doubles the sequential read rate of Samsung’s ...
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