Imec makes progress on GAA transistors

Imec reports significant progress in process enabling the introduction of gate-all-around (GAA) transistors with vertically stacked nanowires and nanosheets for the N3 technology node. Results include improved Si GAA devices, better understanding of strain engineering in Ge nanowire pFETs, and a comprehensive understanding of reliability and degradation mechanisms of nanowire FETs. GAA MOSFETs are promising ...

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