2018年8月23日 星期四

Good old sputtering might be a route to MRAM

The University of Minnesota has sputtered a ‘topological insulator’ – a solid that conducts on its surface but not inside – avoiding the single crystal growth process or molecular beam epitaxy normally needed. Bismuth selenide (Bi2Se3) is the material, magnetron-sputtered into a thin film of particles <6nm across in hetero-structures with CoFeB – “Using the sputtering ...

This story continues at Good old sputtering might be a route to MRAM

Or just read more coverage at Electronics Weekly



from News – Electronics Weekly https://ift.tt/2OZkOFE
via Yuichun

沒有留言:

張貼留言