China-based GigaDevice Semiconductor and Hefei RuiLi Integrated Circuit Manufacture (formerly Hefei ChangXin IC) will team up to develop 19nm DRAM process technology for the production of 12-inch wafers at a total investment of CNY18 billion (US$2.71 billion), a move widely seen to usher in a new stage of competition in China's DRAM market, according to industry sources.
from DIGITIMES: IT news from Asia http://ift.tt/2zTXGB3
via Yuichun
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