Toshiba has developed four level cell NAND flash prototype ICs which it calls QLC. ‘Multi-bit cell flash memories store data by managing the number of electrons in each individual memory cell,’ says Toshiba, ‘achieving QLC technology posed a series of technical challenges, as increasing the number of bit-per-cell by one within same electron count requires ...
Read full article: Tosiba develops quad level cell NAND
from News – Electronics Weekly http://ift.tt/2u0Kecn
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