Researchers at Aalto University in Finland have discovered large uniform reversible changes in electrical resistance as oxygen ions migrate in an oxide material. The discovery could open a route to ionotronic memories. It transpires that potential difference drives oxygen ions away from one electrical contact, causing an abrupt change in oxide lattice structure and an ...
Read full article: Anyone for ionotronic memory?
from News – Electronics Weekly http://ift.tt/2kPWQSP
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