The firm is making LEDs using a GaN-on-Silicon process at its fab in Devon – a process that lends itself to making large die, as well as in-package component integration.
Visible on the die surface, is the x-y electrode grid.
The company is now claiming 120 lm/W of white light from its technology, having doubled efficacy over the last six months, and is rapidly catching up with traditional GaN-on-sapphire LED makers.
from News http://ift.tt/1x4nv8y
via Yuichun
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