A paper from CEA-Leti called “A new FD-SOI spin qubit platform with 40nm effective control pitch”, notes that operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the quantum dots’ chemical potential, i.e. the charge occupation of each dot, from the ...
This story continues at Leti proposes FD-SOI spin qubit platform for quantum computing
Or just read more coverage at Electronics Weekly
from News – Electronics Weekly https://ift.tt/3EFpfza
via Yuichun
沒有留言:
張貼留言