Capacitorless indium-gallium-zinc-oxide (IGZO DRAM is a suitable candidate for realizing high-density 3D DRAM, says Imec. Imec has developed a fully 300mm BEOL compatible IGZO-based capacitorless DRAM cell with >103s retention and unlimited (>1011) endurance. These results were obtained after selecting the most optimal integration scheme for the single IGZO transistors, i.e., a gate-last integration scheme ...
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