2015年3月31日 星期二

220 GaN MOCVD reactors to be installed in 2015, says IHS

Due to the major aggressive expansion plans of some China-based LED companies, IHS forecasts that 220 gallium nitride (GaN) reactors will be installed in 2015. This new capacity expansion is slightly different from what happened several years ago, when large numbers of LED companies in China purchased government-subsidized tools.



from DIGITIMES: IT news from Asia http://ift.tt/1Drsg3o

via Yuichun

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