With their low losses, fast switching and high temperature tolerance, silicon carbide mosfets are now a viable option for high-current switching for use below 2kV. However, the field is relatively new and the ‘right’ way to drive such devices has yet to be established. At ISSCC 2023, National Yang Ming Chiao Tung University of Taiwan ...
The post ISSCC 2023: GaN and Si combine to drive SiC at 1,700V appeared first on Electronics Weekly.
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