At ISSCC 2023 in San Francisco, Belgian research lab Imec presented transistor designs shrunk beyond the capabilities of silicon. It argued that finfet and gate-all-around designs can only go so far with silicon as, to get fast access to the carriers inside a channel, the channels have to be so thin that physics takes its ...
The post ISSCC 2023: 2D materials instead of silicon in the angstrom era? appeared first on Electronics Weekly.
from News | Electronics Weekly https://ift.tt/8bhIEAl
via Yuichun
沒有留言:
張貼留言