SiC defect study could improve power bipolar transistors

Silicon carbide mosfets and Schottky diodes are both subject to the unipolar limit – the trade-off between breakdown voltage and specific resistance of the drift layer. Super-junction transistors bypass this limit, and bipolar transistor are not subject to it, but both require p-type semiconductor layers in otherwise n-type unipolar devices. To create p-type SiC, it ...

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