Toshiba stacks 16 NAND flash die

Toshiba has used through silicon vias (TSVs) to connect up to 16 stacked die in a range NAND flash chips.

The prototype will be shown at Flash Memory Summit in Santa Clara next week.

“Prior art stacked NAND flash memories are connected together with wire bonding in a package,” said the firm. “TSV technology instead utilises the vertical electrodes and vias to pass through the silicon dies for the connection. This enables high-speed data input and output, and reduces power consumption.”

I/O data rate is >1Gbit/s with 1.8V to the core and 1.2V I/O.

High-end enterprise solid-state drives are a potential application.

New Energy and Industrial Technology Development Organization (NEDO) developed some of the technology.

Prototype specification

Package type	NAND dual x8 BGA-152	NAND dual x8 BGA-152
Capacity Gbytes	128	256
Number stacked	8	16
width mm	14	14
depth	18	18
height	1.35	1.90
interface	toggle DDR	toggle DDR

steve bush

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