Toshiba sampling 256Gbit V-NAND next month.

Toshiba is to start sampling a 256GBit, 48-layer, triple-level cell V-NAND memory next month.

BiCS FLASH, as Toshiba calls it, is based on a 48-layer stacking process that surpasses the capacity of mainstream two dimensional NAND flash memory, while enhancing write/erase reliability endurance and boosting write speeds.

The 256Gb device is suitable for consumer SSDs, smartphones, tablets, memory cards, and enterprise SSDs for data centres.

Since announcing the prototype BiCS FLASH technology in June 2007, Toshiba has continued development towards optimisation for mass production. To meet further growth in the flash memory market in 2016 and beyond, Toshiba is proactively promoting migration to BiCS FLASH by rolling out a product portfolio that emphasizes large capacity applications, such as SSDs.

Toshiba is currently readying for mass production of BiCS FLASH in the new Fab2 at Yokkaichi Operations, its production site for NAND flash memories. Fab2 will be completed in the first half of 2016.

david manners

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