“The commercial battle for next-generation power semiconductors is evolving. As a result, many semiconductor manufacturers are attempting to enter the market,” Already it’s a $150 million market, although small compared to the $14 billion silicon-based power semiconductor market.
“We see insulated-gate bipolar transistor (IGBT) and power metal-oxide-semiconductor field-effect transistor (MOSFET) as the main growth drivers,” says Dr. Robert Castellano, president of The Information Network (pictured), “we look for strongest growth from IGBTs, although power MOSFETs had the largest market share in 2013 due to its fast switching speed, near-perfect gate impedance, fast switching speed, excellent stability, and a relatively low on-state resistance.
Because of their attractive performances, wide-bandgap power semiconductor devices have been under intense R&D. In development since the early 1990s, SiC material for power device applications has gone through the longest period and come furthest in terms of maturity and reliability.
The next-gen power semiconductor market is expected to have a CAGR of 63% between 2011 and 2017 when it will top $500 million.
Significant improvements on the technique of growing GaN material on Si substrates have enabled high quality, crack-free GaN epi layers grown on Si, overcoming the 17% crystal mismatch between the two materials crystal faces. For GaN epitaxy on Si or SiC, Veeco and Aixtron will benefit and grow strongly, utilising their expertise in LED epitaxy.
Silicon MOSFETs use wirebonding and traditional SO or TO packages. GaN on Silicon can be bonded using flip chip. Companies benefiting would be equipment suppliers to the flip chip industry, such as TEL NeXX.
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