Renesas is aiming its next generation of IGBTs at electric vehicle inverters, and is making them on 300mm wafers. Behind them it its new ‘AE5’ process. “The silicon based process achieves a 10% reduction in power losses compared to the current-generation AE4 products,” said Renesas, “In addition, the new products are approximately 10% smaller while ...
The post Renesas aims 750V and 1.2kV IGBTs at electric vehicle inverters appeared first on Electronics Weekly.
from | Electronics Weekly https://ift.tt/lJR2csd
via Yuichun
沒有留言:
張貼留言