Teledyne e2v HiRel is screening 650V 60A GaN power transistors to NASA Level 1 flow for space use, and has released a 100V high-speed GaN or silicon gate driver. The transistors (right) are both enhancement-mode, top-side-cooled GaN-on-silicon hemts. “The parts go through NASA Level 1 screening flow and can be brought up to full Level 1 conformance ...
This story continues at GaN 650V power transistors for space, and a 100V GaN driver
Or just read more coverage at Electronics Weekly
from News – Electronics Weekly https://ift.tt/zVt4iE2
via Yuichun
沒有留言:
張貼留言