UK fab-less semiconductor company Cambridge GaN Devices has finally revealed its initial product range, at APEC in Houston. The company is using monolithic GaN integration, branded ‘ICeGaN’, to modify the gate behaviour of GaN power transistors, without using cascode-pairing, to make them compatible with drivers made for traditional silicon mosfets. At the same time, it ...
This story continues at APEC: Fabless UK GaN company reveals easily-driven power transistors, with current sense
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