GaN power transistors are becoming the gold standard for fast compact mains power switching – GaN HEMTs have no reverse recovery charge and can be designed with low on-resistance and low parasitic capacitance. However, their gates are fussy, and unbelievably fussy if all available speed is to be squeezed from this technology. Inappropriate gate drive ...
This story continues at ISSCC 2021: Integrated GaN gate drive switches mains power at >100V/ns
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