Toshiba aims at Highest-Fi

In a world where GaN HEMTs exist, it is not often anyone announces a silicon bipolar power transistor, but Toshiba has done just that by revealing a complementary pair for 100W Hi-Fi audio amplifiers.

Packaged in TO-3P(N), 2SA1943N (pnp) and 2SC5200N (npn) are physically smaller (15.9 x 40.5 x 4.8mm) than the firm’s existing 2SA1943-2SC5200 pair.

“They provide the same high quality sound output in just three quarters of the width and length compared to the previous TO-3P(L) package, whilst maintaining package power at 150W,” said the firm.

2SA1943N and 2SC5200N are both rated at 230Vce and 15A continuously.

Gain in both is 80 at 5Vce and 1A, or 35 at 5Vce and 7A.

“An advantage is the high linearity of hFE and also VBE,” said Toshiba. Both devices achieve a typical transition frequency of 30MHz.

steve bush

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via Yuichun